ROHM SCT2H12NZ Type N-Channel MOSFET, 3.7 A, 1700 V Enhancement, 3-Pin TO-3PFM SCT2H12NZGC11
- RS-stocknr.:
- 133-2860
- Fabrikantnummer:
- SCT2H12NZGC11
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 16,86
(excl. BTW)
€ 20,40
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending 112 stuk(s) vanaf 18 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 8,43 | € 16,86 |
| 10 - 18 | € 7,02 | € 14,04 |
| 20 - 98 | € 6,985 | € 13,97 |
| 100 - 198 | € 6,905 | € 13,81 |
| 200 + | € 6,78 | € 13,56 |
*prijsindicatie
- RS-stocknr.:
- 133-2860
- Fabrikantnummer:
- SCT2H12NZGC11
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.7A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Package Type | TO-3PFM | |
| Series | SCT2H12NZ | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 4.3V | |
| Maximum Power Dissipation Pd | 35W | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 21mm | |
| Length | 16mm | |
| Standards/Approvals | Pb-free lead plating, RoHS | |
| Width | 5 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.7A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Package Type TO-3PFM | ||
Series SCT2H12NZ | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 4.3V | ||
Maximum Power Dissipation Pd 35W | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 21mm | ||
Length 16mm | ||
Standards/Approvals Pb-free lead plating, RoHS | ||
Width 5 mm | ||
Automotive Standard No | ||
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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