ROHM N channel-Channel MOSFET, 3.9 A, 1700 V, 7-Pin TO SCT2H12NWBTL1

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€ 6,76

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€ 8,18

(incl. BTW)

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2 - 18€ 3,38€ 6,76
20 - 98€ 2,975€ 5,95
100 +€ 2,40€ 4,80

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Verpakkingsopties
RS-stocknr.:
780-669
Fabrikantnummer:
SCT2H12NWBTL1
Fabrikant:
ROHM
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Merk

ROHM

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.9A

Maximum Drain Source Voltage Vds

1700V

Package Type

TO

Mount Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance Rds

1.5Ω

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

0V

Maximum Power Dissipation Pd

39W

Typical Gate Charge Qg @ Vgs

24nC

Maximum Operating Temperature

175°C

Length

15.5mm

Width

10.2mm

Standards/Approvals

RoHS Compliant

Height

4.5mm

Automotive Standard

No

The ROHM Silicon Carbide MOSFET delivers high-performance N-channel switching for high-voltage industrial power management. This Advanced SiC device is engineered for auxiliary power supplies, ensuring superior thermal conductivity and lower switching losses compared to traditional silicon components.

Drain to source voltage of 1700 V

Continuous drain current of 3.9 A

1.15 Ohm typical on-resistance

High power dissipation of 39 W

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