Fabrikantnummer

ROHM Half Bridge BSM N-Channel SiC Power Module, 240 A, 1.2 kV Enhancement, 4-Pin BSM120D12P2C005

RS-stocknr.:: 144-2257
Fabrikantnummer:: BSM120D12P2C005
Fabrikant:: ROHM

ROHM Half Bridge BSM N-Channel SiC Power Module, 240 A, 1.2 kV Enhancement, 4-Pin BSM120D12P2C005

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 eenheid)*

€ 425,53

(excl. BTW)

€ 514,89

(incl. BTW)

Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw

Aantal stuks	Per stuk
1 - 4	€ 425,53
5 - 9	€ 414,47
10 - 24	€ 403,82
25 +	€ 393,61

*prijsindicatie

RS-stocknr.:: 144-2257
Fabrikantnummer:: BSM120D12P2C005
Fabrikant:: ROHM

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	ROHM
	Channel Type	N
	Product Type	SiC Power Module
	Maximum Continuous Drain Current Id	240A
	Maximum Drain Source Voltage Vds	1.2kV
	Series	BSM
	Mount Type	Surface
	Pin Count	4
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	22V
	Maximum Power Dissipation Pd	935W
	Minimum Operating Temperature	-40°C
	Transistor Configuration	Half Bridge
	Maximum Operating Temperature	150°C
	Height	17mm
	Width	45.6mm
	Length	122mm
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk ROHM
	Channel Type N
	Product Type SiC Power Module
	Maximum Continuous Drain Current Id 240A
	Maximum Drain Source Voltage Vds 1.2kV
	Series BSM
	Mount Type Surface
	Pin Count 4
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 22V
	Maximum Power Dissipation Pd 935W
	Minimum Operating Temperature -40°C
	Transistor Configuration Half Bridge
	Maximum Operating Temperature 150°C
	Height 17mm
	Width 45.6mm
	Length 122mm
	Standards/Approvals No
	Automotive Standard No

Land van herkomst:: JP

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration

Low Surge Current

Low Power Switching Losses

High-Speed Switching

Low Operating Temperature

MOSFET Transistors, ROHM Semiconductor

Note

BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.

ROHM Half Bridge BSM N-Channel SiC Power Module, 240 A, 1.2 kV Enhancement, 4-Pin BSM120D12P2C005

Bulkkorting

SiC Power Modules, ROHM

MOSFET Transistors, ROHM Semiconductor

Note

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