ROHM Half Bridge BSM Type N-Channel SiC Power Module, 240 A, 1200 V Enhancement, 4-Pin BSM120D12P2C005
- RS-stocknr.:
- 144-2257
- Fabrikantnummer:
- BSM120D12P2C005
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 425,53
(excl. BTW)
€ 514,89
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 08 juni 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 425,53 |
| 5 - 9 | € 414,47 |
| 10 - 24 | € 403,82 |
| 25 + | € 393,61 |
*prijsindicatie
- RS-stocknr.:
- 144-2257
- Fabrikantnummer:
- BSM120D12P2C005
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 240A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | BSM | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 250W | |
| Minimum Operating Temperature | -40°C | |
| Transistor Configuration | Half Bridge | |
| Maximum Operating Temperature | 150°C | |
| Width | 45.6 mm | |
| Length | 122mm | |
| Standards/Approvals | No | |
| Height | 17mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 240A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series BSM | ||
Mount Type Surface | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 250W | ||
Minimum Operating Temperature -40°C | ||
Transistor Configuration Half Bridge | ||
Maximum Operating Temperature 150°C | ||
Width 45.6 mm | ||
Length 122mm | ||
Standards/Approvals No | ||
Height 17mm | ||
Automotive Standard No | ||
- Land van herkomst:
- JP
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
MOSFET Transistors, ROHM Semiconductor
Note
BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.
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