onsemi QFET N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-220 FQP8N80C
- RS-stocknr.:
- 145-4314
- Fabrikantnummer:
- FQP8N80C
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (50 eenheden, in een tube van 50)*
€ 71,70
(excl. BTW)
€ 86,75
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- 900 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 1,434 | € 71,70 |
| 100 + | € 1,348 | € 67,40 |
*prijsindicatie
- RS-stocknr.:
- 145-4314
- Fabrikantnummer:
- FQP8N80C
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | QFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.55Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Maximum Power Dissipation Pd | 178W | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 9.4mm | |
| Length | 10.1mm | |
| Width | 4.7mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series QFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.55Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Maximum Power Dissipation Pd 178W | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 9.4mm | ||
Length 10.1mm | ||
Width 4.7mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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