onsemi QFET Type N-Channel MOSFET, 1.5 A, 800 V Enhancement, 3-Pin TO-220 FQPF2N80
- RS-stocknr.:
- 166-1866
- Fabrikantnummer:
- FQPF2N80
- Fabrikant:
- onsemi
Momenteel niet beschikbaar
Sorry, we weten niet wanneer dit weer voorradig zal zijn.
- RS-stocknr.:
- 166-1866
- Fabrikantnummer:
- FQPF2N80
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | QFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.3Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 35W | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.19mm | |
| Length | 10.16mm | |
| Standards/Approvals | No | |
| Width | 4.7 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series QFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.3Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 35W | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 9.19mm | ||
Length 10.16mm | ||
Standards/Approvals No | ||
Width 4.7 mm | ||
Automotive Standard No | ||
QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Gerelateerde Links
- onsemi QFET N-Channel MOSFET 800 V, 3-Pin TO-220F FQPF2N80
- onsemi QFET N-Channel MOSFET 800 V, 3-Pin TO-220F FQPF7N80C
- onsemi QFET N-Channel MOSFET 800 V, 3-Pin TO-220F FQPF3N80C
- onsemi QFET N-Channel MOSFET 800 V, 3-Pin TO-220F FQPF6N80C
- onsemi QFET N-Channel MOSFET 800 V, 3-Pin TO-220F FQPF8N80C
- onsemi QFET N-Channel MOSFET 60 V, 3-Pin TO-220F FQPF85N06
- onsemi QFET N-Channel MOSFET 60 V, 3-Pin TO-220F FQPF30N06L
- onsemi QFET N-Channel MOSFET 200 V, 3-Pin TO-220F FQPF19N20C