onsemi SuperFET II N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 FCP190N60_GF102
- RS-stocknr.:
- 145-4656
- Fabrikantnummer:
- FCP190N60_GF102
- Fabrikant:
- onsemi
Subtotaal (1 tube van 50 eenheden)*
€ 113,80
(excl. BTW)
€ 137,70
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 + | € 2,276 | € 113,80 |
*prijsindicatie
- RS-stocknr.:
- 145-4656
- Fabrikantnummer:
- FCP190N60_GF102
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220 | |
| Series | SuperFET II | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 199 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 208 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Width | 4.672mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 10.36mm | |
| Typical Gate Charge @ Vgs | 57 nC @ 10 V | |
| Height | 15.215mm | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220 | ||
Series SuperFET II | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 199 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 208 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Width 4.672mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 10.36mm | ||
Typical Gate Charge @ Vgs 57 nC @ 10 V | ||
Height 15.215mm | ||
Minimum Operating Temperature -55 °C | ||
- Land van herkomst:
- KR
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