onsemi SuperFET II N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 FCP190N60_GF102

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RS-stocknr.:
145-4656
Fabrikantnummer:
FCP190N60_GF102
Fabrikant:
onsemi
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Merk

onsemi

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Series

SuperFET II

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

199 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

208 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

10.36mm

Typical Gate Charge @ Vgs

57 nC @ 10 V

Number of Elements per Chip

1

Width

4.672mm

Transistor Material

Si

Height

15.215mm

Minimum Operating Temperature

-55 °C

Land van herkomst:
KR

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor


Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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