Infineon HEXFET Type N-Channel MOSFET, 190 A, 40 V Enhancement, 3-Pin TO-220

RS-stocknr.:: 145-9431
Fabrikantnummer:: IRF1404ZPBF
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 190 A, 40 V Enhancement, 3-Pin TO-220

Bulkkorting beschikbaar

Subtotaal (1 tube van 50 eenheden)*

€ 48,45

(excl. BTW)

€ 58,60

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Tijdelijk niet op voorraad

Verzending 1.000 stuk(s) vanaf 08 januari 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
50 - 50	€ 0,969	€ 48,45
100 - 200	€ 0,921	€ 46,05
250 - 450	€ 0,882	€ 44,10
500 - 1200	€ 0,824	€ 41,20
1250 +	€ 0,775	€ 38,75

*prijsindicatie

RS-stocknr.:: 145-9431
Fabrikantnummer:: IRF1404ZPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	190A
	Maximum Drain Source Voltage Vds	40V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	4mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	220W
	Typical Gate Charge Qg @ Vgs	100nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	8.77mm
	Length	10.54mm
	Standards/Approvals	No
	Width	4.69 mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 190A
	Maximum Drain Source Voltage Vds 40V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 4mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 220W
	Typical Gate Charge Qg @ Vgs 100nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 8.77mm
	Length 10.54mm
	Standards/Approvals No
	Width 4.69 mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 180A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRF1404ZPBF

This MOSFET is a high-performance power component designed for a variety of applications in the automotive and industrial sectors. With a robust continuous drain current of 180A and a maximum drain-source voltage of 40V, it excels in demanding environments. The TO-220AB package type facilitates easy mounting, ensuring efficient integration into electronic circuits and systems.

Features & Benefits

• Utilises HEXFET technology for enhanced efficiency

• Designed for enhancement mode to optimise switching

• Provides fast switching speed to boost overall efficiency

• Capable of repetitive avalanche to enhance reliability

Applications

• Ideal for use in motor control circuits

• Utilised in power supplies and converters

• Designed for use in automotive

• Suited for various industrial automation systems

• Effective in power management and switching

How does the low on-resistance benefit my applications?

The low on-resistance of 2.7mΩ reduces conduction losses, improving overall efficiency in power conversion and energy management systems.

What happens if the device exceeds its maximum operating temperature?

Exceeding the maximum operating temperature of +175°C can lead to performance degradation and potential failure, emphasising the need for adequate thermal management.

Can this be used in parallel configurations?

Yes, when used in parallel configurations, it is Crucial to balance current sharing between devices to avoid overheating and maximise performance.