Infineon HEXFET Type N-Channel MOSFET, 64 A, 55 V Enhancement, 3-Pin TO-220

RS-stocknr.:: 919-4797
Fabrikantnummer:: IRFZ48NPBF
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 64 A, 55 V Enhancement, 3-Pin TO-220

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Subtotaal (1 tube van 50 eenheden)*

€ 40,80

(excl. BTW)

€ 49,35

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

200 stuk(s) klaar voor verzending vanaf een andere locatie

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 0,816	€ 40,80
100 - 200	€ 0,62	€ 31,00
250 - 450	€ 0,579	€ 28,95
500 - 1200	€ 0,539	€ 26,95
1250 +	€ 0,498	€ 24,90

*prijsindicatie

RS-stocknr.:: 919-4797
Fabrikantnummer:: IRFZ48NPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	64A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	14mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	130W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	81nC
	Maximum Operating Temperature	175°C
	Width	4.69mm
	Height	8.77mm
	Length	10.54mm
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 64A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 14mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 130W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 81nC
	Maximum Operating Temperature 175°C
	Width 4.69mm
	Height 8.77mm
	Length 10.54mm
	Standards/Approvals No
	Automotive Standard No

Land van herkomst:: CN

Infineon HEXFET Series MOSFET, 64A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRFZ48NPBF

This power MOSFET is suitable for high-efficiency applications, featuring robust performance and advanced processing methods. It provides a dependable option for a variety of electronic designs, especially in scenarios where power efficiency is essential.

Features & Benefits

• Supports continuous drain currents of up to 64A

• Utilises enhancement mode for improved switching characteristics

• Low RDS(on) of 14mΩ enhances efficiency

• Operates reliably within a temperature range of -55°C to +175°C

• Capable of handling gate-source voltages up to ±20V

• Fully avalanche rated for safety in transient conditions

Applications

• Driving inductive loads in automation systems

• Power management circuits in industrial equipment

• Automotive electrical systems and power converters

• DC-DC converters and power supplies

• Motor control requiring high efficiency

What is the maximum power dissipation capability?

The device can manage a maximum power dissipation of 130 W when adequately cooled, ensuring effective thermal management in high-load scenarios.

How does the operating temperature range affect performance?

The extensive operating temperature range of -55°C to +175°C allows the device to function reliably in a variety of environmental conditions.

Is this device compatible with standard PCB layouts?

Yes, it is available in a TO-220AB package, commonly used in industry for straightforward PCB mounting and efficient heat dissipation.

What applications benefit most from this component's fast switching speed?

Power MOSFETs with fast switching capabilities are ideal for applications such as switch mode power supplies and high-frequency converters, where low switching losses are crucial.

How should the device be handled during installation?

During installation, ensure proper mounting torque and avoid excessive soldering temperatures. It is recommended to adhere to standard safety guidelines to prevent damage.