Infineon HEXFET N-Channel MOSFET, 47 A, 55 V Enhancement, 3-Pin TO-220

RS-stocknr.:: 919-4814
Fabrikantnummer:: IRLZ44NPBF
Fabrikant:: Infineon

Infineon HEXFET N-Channel MOSFET, 47 A, 55 V Enhancement, 3-Pin TO-220

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Subtotaal (1 tube van 50 eenheden)*

€ 44,80

(excl. BTW)

€ 54,20

(incl. BTW)

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Op voorraad

Plus verzending 800 stuk(s) vanaf 07 oktober 2026
Plus verzending 800 stuk(s) vanaf 14 oktober 2026
Plus verzending 2.000 stuk(s) vanaf 21 januari 2027

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 0,896	€ 44,80
100 - 200	€ 0,663	€ 33,15
250 - 450	€ 0,618	€ 30,90
500 - 950	€ 0,573	€ 28,65
1000 +	€ 0,528	€ 26,40

*prijsindicatie

RS-stocknr.:: 919-4814
Fabrikantnummer:: IRLZ44NPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	47A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	22mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	48nC
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	-16V, +16V
	Maximum Power Dissipation Pd	110W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	8.77mm
	Width	4.69mm
	Standards/Approvals	No
	Length	10.54mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 47A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 22mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 48nC
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs -16V, +16V
	Maximum Power Dissipation Pd 110W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 8.77mm
	Width 4.69mm
	Standards/Approvals No
	Length 10.54mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 47A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRLZ44NPBF

This high-performance N-channel MOSFET from Infineon is designed for efficient switching and substantial power handling in electronic systems. Utilising advanced HEXFET technology, it caters to various semiconductor applications, making it suitable for professionals in automation, electronics, and electrical engineering seeking robust performance in power management.

Features & Benefits

• Supports continuous drain current up to 47A for effective power delivery

• Operates at a drain-source voltage of 55V, enhancing application versatility

• Maximum power dissipation of 110W optimises thermal management

• Enhancement mode design ensures effective switching and control

• Low gate threshold voltage range of 1V to 2V facilitates control with minimal drive voltage

• High current handling with a low on-resistance of 22mΩ improves efficiency

Applications

• Power supply circuits requiring efficient load switching

• DC-DC converters in renewable energy systems

• Automotive demanding high performance

• Motor control systems for enhanced operational efficiency

• Lighting systems requiring precise power regulation

What is the operating temperature range of the device?

The device functions effectively within a temperature range of -55°C to +175°C, ensuring reliability in various environmental conditions.

How should this be mounted for optimal performance?

It is designed for through-hole mounting in a TO-220AB package, enabling effective heat dissipation during operation.

Can it be used with other power management components?

Yes, it is compatible with a range of power management and switching components, fitting seamlessly into various circuit designs.

What are the implications of the gate threshold voltage range?

A gate threshold voltage of 1V to 2V allows for easy driving with standard signal levels, simplifying circuit designs and enhancing compatibility.

Is it suitable for high-frequency applications?

With a low gate charge of 48nC at 5V, it supports high-frequency switching applications, contributing to overall efficiency in power systems.