IXYS HiperFET Type N-Channel MOSFET, 80 A, 250 V Enhancement, 3-Pin TO-263 IXFA80N25X3

RS-stocknr.:: 146-4231
Fabrikantnummer:: IXFA80N25X3
Fabrikant:: IXYS

IXYS HiperFET Type N-Channel MOSFET, 80 A, 250 V Enhancement, 3-Pin TO-263 IXFA80N25X3

Subtotaal (1 tube van 50 eenheden)*

€ 320,75

(excl. BTW)

€ 388,10

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Op voorraad

Plus verzending 200 stuk(s) vanaf 29 december 2025

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
50 +	€ 6,415	€ 320,75

*prijsindicatie

RS-stocknr.:: 146-4231
Fabrikantnummer:: IXFA80N25X3
Fabrikant:: IXYS

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	IXYS
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	80A
	Maximum Drain Source Voltage Vds	250V
	Series	HiperFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	16mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.4V
	Maximum Power Dissipation Pd	390W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	83nC
	Maximum Operating Temperature	150°C
	Height	4.83mm
	Width	11.05 mm
	Length	10.41mm
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk IXYS
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 80A
	Maximum Drain Source Voltage Vds 250V
	Series HiperFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 16mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.4V
	Maximum Power Dissipation Pd 390W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 83nC
	Maximum Operating Temperature 150°C
	Height 4.83mm
	Width 11.05 mm
	Length 10.41mm
	Standards/Approvals No
	Automotive Standard No

Lowest on-resistance RDS(ON) and gate charge Qg

Fast soft recovery body diode dv/dt ruggedness

Superior avalanche capability

International standard packages

Battery chargers for light electric vehicles

Synchronous rectiﬁcation in switching power supplies

Motor control

DC-DC converters

Uninterruptible power supplies

Electric forklifts

Class-D audio ampliﬁers

Telecom systems

High eﬃciency

High power density

Improved system reliability

Easy to design in

200 MHz/330 DMIPS, MIPS32 microAptiv core

Dual Panel Flash for live update support

12-bit, 18 MSPS, 45-channel ADC module

Memory Management Unit for optimum embedded OS execution

microMIPS mode for up to 35% code compression

CAN, UART, I2C, PMP, EBI, SQI & Analog Comparators

SPI/I2S interfaces for audio processing and playback

Hi-Speed USB Device/Host/OTG

10/100 Mbps Ethernet MAC with MII and RMII Interface

Advanced Memory Protection

2MB Flash memory (plus an additional 160 KB of Boot Flash)

640KB SRAM memory

IXYS HiperFET Type N-Channel MOSFET, 80 A, 250 V Enhancement, 3-Pin TO-263 IXFA80N25X3

GRATIS bezorging voor bestellingen van meer dan € 75,00

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