Nexperia Type N-Channel MOSFET, 600 mA, 20 V Enhancement, 8-Pin DFN

Bekijk alle MOSFETs

Subtotaal (1 rol van 5000 eenheden)*

€ 1.165,00

(excl. BTW)

€ 1.410,00

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Tijdelijk niet op voorraad
  • Verzending vanaf 14 juli 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per rol*
5000 +€ 0,233€ 1.165,00

*prijsindicatie

RS-stocknr.:
151-3049
Fabrikantnummer:
PMDXB600UNEZ
Fabrikant:
Nexperia
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

600mA

Maximum Drain Source Voltage Vds

20V

Package Type

DFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

8 V

Typical Gate Charge Qg @ Vgs

0.4nC

Maximum Power Dissipation Pd

4.03W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

0.4mm

Length

1.15mm

Width

1.05 mm

Standards/Approvals

No

Automotive Standard

No

N-channel MOSFETs ≤ 20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.

20 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

ElectroStatic Discharge (ESD) protection > 1 kV HBM

Drain-source on-state resistance RDSon = 470 mΩ

Gerelateerde Links