Nexperia N-Channel MOSFET, 600 mA, 20 V Enhancement, 8-Pin DFN PMDXB600UNEZ

RS-stocknr.:: 151-3178
Fabrikantnummer:: PMDXB600UNEZ
Fabrikant:: Nexperia

Nexperia N-Channel MOSFET, 600 mA, 20 V Enhancement, 8-Pin DFN PMDXB600UNEZ

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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.

RS-stocknr.:: 151-3178
Fabrikantnummer:: PMDXB600UNEZ
Fabrikant:: Nexperia

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Nexperia
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	600mA
	Maximum Drain Source Voltage Vds	20V
	Package Type	DFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	0.4nC
	Maximum Power Dissipation Pd	4.03W
	Maximum Gate Source Voltage Vgs	8V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	1.15mm
	Width	1.05mm
	Height	400μm
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Nexperia
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 600mA
	Maximum Drain Source Voltage Vds 20V
	Package Type DFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 0.4nC
	Maximum Power Dissipation Pd 4.03W
	Maximum Gate Source Voltage Vgs 8V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 1.15mm
	Width 1.05mm
	Height 400μm
	Standards/Approvals No
	Automotive Standard No

N-channel MOSFETs ≤ 20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.

20 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

ElectroStatic Discharge (ESD) protection > 1 kV HBM

Drain-source on-state resistance RDSon = 470 mΩ

Nexperia N-Channel MOSFET, 600 mA, 20 V Enhancement, 8-Pin DFN PMDXB600UNEZ

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