Nexperia Type P-Channel MOSFET, -2.4 A, -30 V Enhancement, 4-Pin DFN

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Subtotaal (1 rol van 5000 eenheden)*

€ 685,00

(excl. BTW)

€ 830,00

(incl. BTW)

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  • Verzending 5.000 stuk(s) vanaf 27 mei 2026
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5000 +€ 0,137€ 685,00

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RS-stocknr.:
151-3073
Fabrikantnummer:
PMXB120EPEZ
Fabrikant:
Nexperia
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Merk

Nexperia

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-2.4A

Maximum Drain Source Voltage Vds

-30V

Package Type

DFN

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

187mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

8.33W

Typical Gate Charge Qg @ Vgs

6.2nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

1.05 mm

Length

1.15mm

Height

0.36mm

Standards/Approvals

No

Automotive Standard

No

P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.

30 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

ElectroStatic Discharge (ESD) protection 1 kV HBM

Drain-source on-state resistance RDSon = 350 mΩ

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