Nexperia Type P-Channel MOSFET, -3.2 A, -12 V Enhancement, 4-Pin DFN

RS-stocknr.:: 151-3036
Fabrikantnummer:: PMXB65UPEZ
Fabrikant:: Nexperia

Nexperia Type P-Channel MOSFET, -3.2 A, -12 V Enhancement, 4-Pin DFN

Subtotaal (1 rol van 5000 eenheden)*

€ 420,00

(excl. BTW)

€ 510,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Tijdelijk niet op voorraad

Verzending 10.000 stuk(s) vanaf 06 mei 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
5000 +	€ 0,084	€ 420,00

*prijsindicatie

RS-stocknr.:: 151-3036
Fabrikantnummer:: PMXB65UPEZ
Fabrikant:: Nexperia

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Nexperia
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-3.2A
	Maximum Drain Source Voltage Vds	-12V
	Package Type	DFN
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	880mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	8.33W
	Maximum Gate Source Voltage Vgs	8 V
	Typical Gate Charge Qg @ Vgs	6.7nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	0.36mm
	Standards/Approvals	No
	Width	1.05 mm
	Length	1.15mm
	Automotive Standard	No

	Alles selecteren
	Merk Nexperia
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -3.2A
	Maximum Drain Source Voltage Vds -12V
	Package Type DFN
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 880mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 8.33W
	Maximum Gate Source Voltage Vgs 8 V
	Typical Gate Charge Qg @ Vgs 6.7nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 0.36mm
	Standards/Approvals No
	Width 1.05 mm
	Length 1.15mm
	Automotive Standard No

P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.

12 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

ElectroStatic Discharge (ESD) protection 1.5 kV HBM

Drain-source on-state resistance RDSon = 59 mΩ

Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V

Nexperia Type P-Channel MOSFET, -3.2 A, -12 V Enhancement, 4-Pin DFN

GRATIS bezorging voor bestellingen van meer dan € 75,00

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