Vishay Si3476DV Type N-Channel MOSFET, 4.6 A, 80 V Enhancement, 6-Pin SOT-23 SI3476DV-T1-GE3
- RS-stocknr.:
- 152-6369
- Fabrikantnummer:
- SI3476DV-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 11,50
(excl. BTW)
€ 14,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Laatste 8.750 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 225 | € 0,46 | € 11,50 |
| 250 - 600 | € 0,432 | € 10,80 |
| 625 - 1225 | € 0,391 | € 9,78 |
| 1250 - 2475 | € 0,368 | € 9,20 |
| 2500 + | € 0,345 | € 8,63 |
*prijsindicatie
- RS-stocknr.:
- 152-6369
- Fabrikantnummer:
- SI3476DV-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.6A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | Si3476DV | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.093Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.6W | |
| Typical Gate Charge Qg @ Vgs | 4.9nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.1mm | |
| Height | 1mm | |
| Width | 1.7 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.6A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series Si3476DV | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.093Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.6W | ||
Typical Gate Charge Qg @ Vgs 4.9nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3.1mm | ||
Height 1mm | ||
Width 1.7 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
TrenchFET® Power MOSFET
Material categorization:
APPLICATIONS
Load Switch for Portable Applications
LED Backlight Switch
DC/DC Converter
Boost Converter
Gerelateerde Links
- Vishay Si3476DV Type N-Channel MOSFET 80 V Enhancement, 6-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin SOT-23 SI2337DS-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin SOT-23 Si2387DS-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SI2307CDS-T1-GE3
- Vishay Si2301CDS Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 SI2301CDS-T1-GE3
- Vishay Si2305CDS Type P-Channel MOSFET 8 V Enhancement, 3-Pin SOT-23 SI2305CDS-T1-GE3
