Texas Instruments NexFET Type N-Channel MOSFET, 273 A, 80 V Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 162-8558
- Fabrikantnummer:
- CSD19506KCS
- Fabrikant:
- Texas Instruments
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- RS-stocknr.:
- 162-8558
- Fabrikantnummer:
- CSD19506KCS
- Fabrikant:
- Texas Instruments
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Texas Instruments | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 273A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | NexFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 120nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.7 mm | |
| Height | 16.51mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Texas Instruments | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 273A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series NexFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 120nC | ||
Maximum Operating Temperature 175°C | ||
Width 4.7 mm | ||
Height 16.51mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
N-Channel NexFET™ Power MOSFET, Texas Instruments
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