Vishay E Type N-Channel MOSFET, 47 A, 600 V Enhancement, 3-Pin TO-247

Bekijk alle MOSFETs
Bulkkorting beschikbaar

Subtotaal (1 tube van 25 eenheden)*

€ 148,50

(excl. BTW)

€ 179,75

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • Plus verzending 225 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per tube*
25 - 25€ 5,94€ 148,50
50 - 100€ 5,584€ 139,60
125 +€ 5,429€ 135,73

*prijsindicatie

RS-stocknr.:
165-2835
Fabrikantnummer:
SIHG47N60E-GE3
Fabrikant:
Vishay
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

47A

Maximum Drain Source Voltage Vds

600V

Series

E

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

64mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

147nC

Maximum Power Dissipation Pd

357W

Maximum Operating Temperature

150°C

Length

15.87mm

Height

20.7mm

Width

5.31 mm

Standards/Approvals

No

Automotive Standard

No

Land van herkomst:
CN

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor


The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features


Low figure-of-merit (FOM) RDS(on) x Qg

Low input capacitance (Ciss)

Low on-resistance (RDS(on))

Ultra-low gate charge (Qg)

Fast switching

Reduced switching and conduction losses

MOSFET Transistors, Vishay Semiconductor


Gerelateerde Links