Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247 SiHG30N60E-GE3

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€ 8,48

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Verpakkingsopties
RS-stocknr.:
787-9421
Fabrikantnummer:
SiHG30N60E-GE3
Fabrikant:
Vishay
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Merk

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

600V

Series

E

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

250W

Typical Gate Charge Qg @ Vgs

85nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Width

5.31 mm

Height

20.82mm

Length

15.87mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor


The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features


Low figure-of-merit (FOM) RDS(on) x Qg

Low input capacitance (Ciss)

Low on-resistance (RDS(on))

Ultra-low gate charge (Qg)

Fast switching

Reduced switching and conduction losses

MOSFET Transistors, Vishay Semiconductor


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