Infineon OptiMOS-T Type N-Channel MOSFET, 17 A, 250 V Enhancement, 3-Pin TO-263

RS-stocknr.:: 165-5608
Fabrikantnummer:: IPB17N25S3100ATMA1
Fabrikant:: Infineon

Infineon OptiMOS-T Type N-Channel MOSFET, 17 A, 250 V Enhancement, 3-Pin TO-263

Subtotaal (1 rol van 1000 eenheden)*

€ 965,00

(excl. BTW)

€ 1.168,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Verzending vanaf 25 november 2026

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Aantal stuks	Per stuk	Per rol*
1000 +	€ 0,965	€ 965,00

*prijsindicatie

RS-stocknr.:: 165-5608
Fabrikantnummer:: IPB17N25S3100ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	17A
	Maximum Drain Source Voltage Vds	250V
	Package Type	TO-263
	Series	OptiMOS-T
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	100mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	14nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	107W
	Forward Voltage Vf	0.9V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	175°C
	Height	4.4mm
	Length	10mm
	Width	9.25mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 17A
	Maximum Drain Source Voltage Vds 250V
	Package Type TO-263
	Series OptiMOS-T
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 100mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 14nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 107W
	Forward Voltage Vf 0.9V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 175°C
	Height 4.4mm
	Length 10mm
	Width 9.25mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

N.v.t.

Land van herkomst:: CN

Infineon OptiMOS-T Series MOSFET, 250V Maximum Drain Source Voltage, 17A Maximum Continuous Drain Current - IPB17N25S3100ATMA1

This MOSFET is a surface‑mount N‑channel enhancement device designed for high‑voltage switching in automotive and industrial power systems. It operates across a wide temperature range and is intended for applications requiring robust thermal endurance and controlled switching performance without detailing its mechanical package or pin count.

Features and Benefits:

• 250V drain rating enabling high‑voltage switching capability
• 17A continuous drain current supporting substantial load currents
• 100 mΩ maximum RDS(on) reducing conduction losses in power stages
• 14 nC typical gate charge for efficient switching control
• 0.9V forward voltage lowering diode conduction drop
• 107W maximum power dissipation permitting high‑power operation

Applications

• Suitable for high‑voltage DC-DC converters in vehicles
• Ideal for motor‑drive half‑bridges in automotive electronics
• Used with power‑management modules in industrial supplies
• Can be used for switch‑mode power supply primary switches

What gate‑drive considerations should I make for switching performance?

Use a driver capable of delivering the gate charge within your targeted switching interval

the typical 14 nC charge lets you estimate peak gate current and switching losses for the chosen drive voltage.

How does the thermal environment affect continuous current capability?

The device’s 107W dissipation rating requires adequate PCB thermal design and heat‑sinking to maintain safe junction temperatures when carrying the specified 17A continuous current.

What protection limits apply to the device’s gate?

Ensure gate voltage remains within ±20V to avoid overstressing the gate oxide and consider transient suppression if exposed to inductive switching spikes.

How tolerant is the device to cold starts and high‑temperature operation?

It is specified to operate from low automotive temperatures up to elevated conditions, aiding use in systems experiencing broad ambient temperature swings.