Infineon OptiMOS 3 Type N-Channel MOSFET, 64 A, 250 V Enhancement, 3-Pin TO-263

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€ 4.547,00

(incl. BTW)

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RS-stocknr.:
165-8068
Fabrikantnummer:
IPB200N25N3GATMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

64A

Maximum Drain Source Voltage Vds

250V

Series

OptiMOS 3

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

20mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

64nC

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Width

9.45 mm

Standards/Approvals

No

Length

10.31mm

Height

4.57mm

Automotive Standard

No

N.v.t.

Land van herkomst:
CN

Infineon OptiMOS™ 3 Series MOSFET, 64A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IPB200N25N3GATMA1


This N-channel MOSFET is designed for efficient power management in various electronic applications, featuring a maximum continuous drain current of 64A and a voltage rating of 250V. Its robust thermal performance and low on-resistance contribute to effective electrical performance across a wide temperature range, making it suitable for high-frequency switching and synchronous rectification.

Features & Benefits


• Optimal gate charge x RDS(on) product enhances efficiency

• Low on-resistance minimises power loss during operation

• Operational temperature up to +175°C accommodates diverse applications

• Complies with RoHS and halogen-free standards for eco-friendly use

• Compact D2PAK design and surface mount facilitate integration

• Qualified according to JEDEC for reliability in target applications

Applications


• Used in power supplies for automation systems

• Appropriate for high-efficiency converters in renewable energy

• Employed in motor control for industrial machinery

• Ideal for synchronous rectification in desktop power supplies

• Applied in electric vehicles for effective energy management

What measures should be taken to ensure optimal performance during installation?


It is important to maintain an effective thermal management system to dissipate heat, ensuring the device operates within its specified temperature limits.

Can this component be used in applications requiring Rapid switching?


Yes, it is suitable for high-frequency applications such as DC-DC converters and drivers due to its fast switching capabilities.

Is there a specific circuit design recommended for optimal use?


A proper gate driver circuit can enhance performance, particularly in terms of turn-on and turn-off times, which helps reduce switching losses.

What should be considered regarding environmental conditions during operation?


Ensure it is placed in an environment where temperatures remain within its operational limits of -55°C to +175°C to prevent thermal degradation.

How does this MOSFET perform under heavy load conditions?


It efficiently handles a continuous drain current of 64A while maintaining low on-resistance, thus reducing overheating and improving reliability under load.

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