Infineon SIPMOS® N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126IXTSA1

RS-stocknr.:: 236-4398
Fabrikantnummer:: BSS126IXTSA1
Fabrikant:: Infineon

Infineon SIPMOS® N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126IXTSA1

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RS-stocknr.:: 236-4398
Fabrikantnummer:: BSS126IXTSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	21mA
	Maximum Drain Source Voltage Vds	600V
	Package Type	SOT-23
	Series	SIPMOS®
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	700Ω
	Channel Mode	Depletion
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	1.4nC
	Maximum Power Dissipation Pd	0.5W
	Maximum Operating Temperature	150°C
	Width	1.4mm
	Length	3mm
	Standards/Approvals	No
	Height	1.1mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 21mA
	Maximum Drain Source Voltage Vds 600V
	Package Type SOT-23
	Series SIPMOS®
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 700Ω
	Channel Mode Depletion
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 1.4nC
	Maximum Power Dissipation Pd 0.5W
	Maximum Operating Temperature 150°C
	Width 1.4mm
	Length 3mm
	Standards/Approvals No
	Height 1.1mm
	Automotive Standard No

Datasheet - BSS126IXTSA1

Infineon SIPMOS® Series MOSFET, 600V Maximum Drain Source Voltage, 0.5W Maximum Power Dissipation - BSS126IXTSA1

This MOSFET is a small-signal, N-channel depletion-mode transistor designed for surface-mounted electronics requiring high-voltage switching in Compact footprints. It operates across a wide temperature range and is intended for low-current applications where a depletion-mode device is preferred to provide normally-on behaviour and simplified gate control.

Features and Benefits:

• Maximum drain-source voltage 600 V enables high-voltage switching
• Maximum continuous drain current 21 mA supports low-power circuits
• Maximum drain-source resistance 700 Ω limits on-state conduction
• Forward voltage 1.2 V reduces voltage drop in driven paths
• Typical gate charge 1.4 nC allows modest gate-drive energy
• Maximum power dissipation 0.5 W suits low-power thermal budgets

Applications

• Suitable for high-voltage biasing networks in analogue designs
• Ideal for low-current protection circuits and bleeder resistors
• Used with small-signal drivers requiring depletion-mode behaviour
• Can be used for current steering in sensor front-ends
• Appropriate for Compact power-management subcircuits in converters

What gate voltage range can be applied safely?

A gate-to-source potential up to 20 V is permissible for normal operation.

What thermal range will the device tolerate during use?

It is rated to function between −55 °C and 150 °C for varied environments.

How is the component packaged for PCB assembly?

It is supplied in a SOT-23 surface-mount package suitable for automated placement.

What mechanical envelope should be allowed on the PCB footprint?

The package measures approximately 3 mm length, 1.4 mm width and 1.1 mm height for land-pattern planning.

Does the device meet automotive-grade classification?

It is not specified as an automotive-standard component and should not be assumed to meet those criteria.