Infineon StrongIRFET N-Channel MOSFET, 195 A, 60 V Enhancement, 3-Pin TO-263 IRFS7534TRLPBF

RS-stocknr.:: 165-6504
Fabrikantnummer:: IRFS7534TRLPBF
Fabrikant:: Infineon

Infineon StrongIRFET N-Channel MOSFET, 195 A, 60 V Enhancement, 3-Pin TO-263 IRFS7534TRLPBF

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Subtotaal (1 rol van 800 eenheden)*

€ 917,60

(excl. BTW)

€ 1.110,40

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Verzending vanaf 05 februari 2027

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Aantal stuks	Per stuk	Per rol*
800 - 800	€ 1,147	€ 917,60
1600 +	€ 1,09	€ 872,00

*prijsindicatie

RS-stocknr.:: 165-6504
Fabrikantnummer:: IRFS7534TRLPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	195A
	Maximum Drain Source Voltage Vds	60V
	Series	StrongIRFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	2.4mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	186nC
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	294W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	9.65mm
	Length	10.67mm
	Height	4.83mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 195A
	Maximum Drain Source Voltage Vds 60V
	Series StrongIRFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 2.4mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 186nC
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 294W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 9.65mm
	Length 10.67mm
	Height 4.83mm
	Automotive Standard No

Land van herkomst:: CN

Infineon StrongIRFET Series MOSFET, 195A Maximum Continuous Drain Current, 294W Maximum Power Dissipation - IRFS7534TRLPBF

This MOSFET is engineered for efficient power management in a range of electronic applications. With the Ability to handle continuous drain currents up to 195A and a drain-source voltage rating of 60V, it delivers effective performance for various tasks. Its capabilities in surface-mount configurations enhance circuit efficiency and reliAbility for professionals in automation and electronics.

Features & Benefits

• High current capacity supports demanding loads

• Low Rds(on) of 2.4mΩ improves energy efficiency

• Designed for high temperature operation up to +175°C

• Robust avalanche and dynamic dV/dt ruggedness for dependable operation

• Fully characterised capacitance facilitates accurate switching performance

Applications

• Suitable for brushed and BLDC motor drive circuits

• Effective for battery-powered and power converters

• Useful in half-bridge and full-bridge topologies for various designs

• Applicable in DC/AC inverters and resonant mode power supplies

• Ideal for redundant power switches in critical systems

How does this component handle thermal management?

It operates efficiently under high thermal conditions with a maximum temperature of +175°C.

What are the implications of the low Rds(on) value?

The low on-resistance minimises conduction losses, leading to enhanced efficiency in power distribution.

Can it be used in applications with variable load conditions?

Yes, its high current capacity and robust characteristics make it capable of managing fluctuating load conditions effectively.

What type of mounting is recommended for optimal performance?

Surface mount technology is suggested for efficient heat dissipation and Compact integration.

How does it perform under pulsed conditions?

It is capable of safely handling pulsed drain currents up to 944A, providing flexibility for transient situations without failure.