Infineon StrongIRFET Type N-Channel MOSFET, 195 A, 60 V Enhancement, 3-Pin TO-220

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€ 81,60

(excl. BTW)

€ 98,75

(incl. BTW)

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50 - 50€ 1,632€ 81,60
100 - 200€ 1,431€ 71,55
250 +€ 1,395€ 69,75

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RS-stocknr.:
145-9657
Fabrikantnummer:
IRFB7530PBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

195A

Maximum Drain Source Voltage Vds

60V

Series

StrongIRFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

375W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

274nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Width

4.83 mm

Length

10.67mm

Height

16.51mm

Standards/Approvals

No

Automotive Standard

No

Land van herkomst:
MX

Infineon StrongIRFET Series MOSFET, 195A Maximum Continuous Drain Current, 375W Maximum Power Dissipation - IRFB7530PBF


This high current N-channel MOSFET is engineered for a range of power applications. Its Advanced structure allows for efficient switching and notable performance in challenging environments, making it suitable for the automation and electronics sectors, where reliability and robustness are essential for effective functioning in electrical circuits.

Features & Benefits


• Maximum continuous drain current of 195A

• Wide operating temperature range from -55°C to +175°C

• Enhanced durability with robust avalanche and dynamic dV/dt ruggedness

• Fully characterised capacitance and avalanche SOA

• Lead-free and complies with RoHS regulations for environmental safety

Applications


• Used in brushed motor drive

• Appropriate for half-bridge and full-bridge topologies

• Suitable for synchronous rectifier

• Ideal for battery-powered circuits and DC/DC converters

• Engaged in AC/DC and DC/AC inverter systems

What is the maximum gate threshold voltage for this component?


The maximum gate threshold voltage is 3.7V, facilitating efficient operation in various gate drive configurations.

Can this MOSFET operate in high-temperature environments?


Yes, it functions effectively within a temperature range of -55°C to +175°C, making it suitable for harsh conditions.

How does this MOSFET perform in terms of power dissipation?


It allows for a maximum power dissipation of 375 W, ensuring dependable performance under substantial load conditions.

Is it suitable for use in both DC and AC applications?


This component is designed for versatility, providing effective performance in both DC/DC and AC/DC power conversion applications.

What are the implications of its low RDS(on) for circuit design?


A low RDS(on) minimises conduction losses, thereby enhancing overall system efficiency and enabling smaller heat sinks and improved thermal performance in circuit designs.

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