Fabrikantnummer

Vishay TrenchFET Type P-Channel MOSFET, 5.9 A, 20 V Enhancement, 3-Pin SOT-23

RS-stocknr.:: 165-6934
Fabrikantnummer:: SI2365EDS-T1-GE3
Fabrikant:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 5.9 A, 20 V Enhancement, 3-Pin SOT-23

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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.

RS-stocknr.:: 165-6934
Fabrikantnummer:: SI2365EDS-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	5.9A
	Maximum Drain Source Voltage Vds	20V
	Series	TrenchFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.0675Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-50°C
	Forward Voltage Vf	-0.8V
	Maximum Power Dissipation Pd	1.7W
	Typical Gate Charge Qg @ Vgs	13.8nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	3.04mm
	Height	1.02mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 5.9A
	Maximum Drain Source Voltage Vds 20V
	Series TrenchFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.0675Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -50°C
	Forward Voltage Vf -0.8V
	Maximum Power Dissipation Pd 1.7W
	Typical Gate Charge Qg @ Vgs 13.8nC
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 3.04mm
	Height 1.02mm
	Automotive Standard No

Land van herkomst:: CN

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