Infineon HEXFET N-Channel MOSFET, 110 A, 55 V, 3-Pin D2PAK AUIRF3205ZS

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RS-stocknr.:
165-7623
Fabrikantnummer:
AUIRF3205ZS
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

170 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Transistor Material

Si

Length

10.67mm

Width

11.3mm

Typical Gate Charge @ Vgs

76 nC @ 10 V

Height

4.83mm

Minimum Operating Temperature

-55 °C

Land van herkomst:
MX

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Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


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