Infineon HEXFET Type P-Channel MOSFET, 5.8 A, 30 V Enhancement, 6-Pin TSOP
- RS-stocknr.:
- 165-8190
- Fabrikantnummer:
- IRFTS9342TRPBF
- Fabrikant:
- Infineon
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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 165-8190
- Fabrikantnummer:
- IRFTS9342TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 5.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSOP | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 66mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.75 mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Height | 1.3mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 5.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSOP | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 66mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Operating Temperature 150°C | ||
Width 1.75 mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Height 1.3mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
Infineon HEXFET Series MOSFET, 5.8A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRFTS9342TRPBF
This MOSFET is designed for high efficiency across various applications, playing a critical role in electronic circuits that require enhanced performance and dependability. Its low on-resistance and significant current-handling capabilities contribute to energy efficiency and system stability in automation and electrical applications.
Features & Benefits
• Low Rds(on) improves energy efficiency
• Continuous drain current support of 5.8 A for effective performance
• Maximum drain-source voltage of 30 V ensures durability
• Surface mount design allows for compact, efficient layouts
• Operating temperature range of -55°C to +150°C enhances adaptability
Applications
• Used in battery-operated DC motor inverters
• Employed for system or load switching in varied circuits
• Applicable for drive operations within automation systems
• Utilised in power management systems for improved efficiency
How does this component perform under extreme temperatures?
It operates effectively within a wide temperature range from -55°C to +150°C, ensuring dependability in various environments.
What is the benefit of the low on-resistance feature?
A low Rds(on) Value decreases power loss in applications, leading to enhanced overall efficiency and thermal performance.
Can this device handle pulsed currents?
Yes, it can manage pulsed drain currents effectively, making it suitable for dynamic applications in electronics.
How is it mounted in circuits?
The device is designed for surface mount applications, facilitating Compact assembly and efficient space utilisation on PCBs.
What considerations should be taken when handling this component?
Users should ensure proper handling due to its sensitivity to voltage levels, adhering to specified maximum gate-source voltage limits.
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