Infineon Single HEXFET 1 Type P-Channel MOSFET, 5.8 A, 30 V Enhancement, 8-Pin SOIC IRF7406TRPBF
- RS-stocknr.:
- 915-4951
- Fabrikantnummer:
- IRF7406TRPBF
- Fabrikant:
- Infineon
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 915-4951
- Fabrikantnummer:
- IRF7406TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Transistor Configuration | Single | |
| Series | HEXFET | |
| Number of Elements per Chip | 1 | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 5.8 A | |
| Maximum Drain Source Voltage (Vds) | 30 V | |
| Channel Mode | Enhancement | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Forward Voltage (Vf) | 1 V | |
| Height | 1.5 mm | |
| Length | 5 mm | |
| Maximum Drain Source Resistance (Rds) | 70 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 20 V, -20 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 2.5 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Width | 4 mm | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Transistor Configuration Single | ||
Series HEXFET | ||
Number of Elements per Chip 1 | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 5.8 A | ||
Maximum Drain Source Voltage (Vds) 30 V | ||
Channel Mode Enhancement | ||
Pin Count 8 | ||
Package Type SOIC | ||
Forward Voltage (Vf) 1 V | ||
Height 1.5 mm | ||
Length 5 mm | ||
Maximum Drain Source Resistance (Rds) 70 mΩ | ||
Maximum Gate Source Voltage (Vgs) 20 V, -20 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 2.5 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Width 4 mm | ||
P-Channel Power MOSFET 30V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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