Infineon HEXFET Type N-Channel MOSFET, 195 A, 150 V Enhancement, 3-Pin TO-263

Bekijk alle MOSFETs

Subtotaal (1 rol van 800 eenheden)*

€ 1.529,60

(excl. BTW)

€ 1.851,20

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Tijdelijk niet op voorraad
  • Verzending vanaf 30 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per rol*
800 +€ 1,912€ 1.529,60

*prijsindicatie

RS-stocknr.:
165-8288
Fabrikantnummer:
IRFS4115TRLPBF
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

195A

Maximum Drain Source Voltage Vds

150V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

77nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

375W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Height

4.83mm

Length

10.67mm

Width

11.3 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Land van herkomst:
CN

N-Channel Power MOSFET 150V to 600V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Gerelateerde Links