Infineon HEXFET N-Channel MOSFET, 195 A, 60 V TO-263 IRFS7530TRLPBF
- RS-stocknr.:
- 257-9438
- Fabrikantnummer:
- IRFS7530TRLPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 7,99
(excl. BTW)
€ 9,67
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Plus verzending 580 stuk(s) vanaf 02 november 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 3,995 | € 7,99 |
| 20 - 48 | € 3,515 | € 7,03 |
| 50 - 98 | € 3,325 | € 6,65 |
| 100 - 198 | € 3,07 | € 6,14 |
| 200 + | € 2,845 | € 5,69 |
*prijsindicatie
- RS-stocknr.:
- 257-9438
- Fabrikantnummer:
- IRFS7530TRLPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 274nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 274nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFS series is the 60V single n channel HEXFET power mosfet in a D2 Pak package.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Optimized for 10 V gate drive voltage (called normal level)
Silicon optimized for applications switching below 100 kHz
Softer body diode compared to previous silicon generation
Industry standard surface mount power package
Capable of being wave soldered
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- Infineon HEXFET N-Channel MOSFET 60 V TO-263