onsemi Isolated PowerTrench 2 N-Channel MOSFET, 5.5 A, 30 V Enhancement, 8-Pin SOIC FDS6930B
- RS-stocknr.:
- 166-1789
- Fabrikantnummer:
- FDS6930B
- Fabrikant:
- onsemi
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 166-1789
- Fabrikantnummer:
- FDS6930B
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Transistor Configuration | Isolated | |
| Series | PowerTrench | |
| Number of Elements per Chip | 2 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 5.5 A | |
| Maximum Drain Source Voltage (Vds) | 30 V | |
| Channel Mode | Enhancement | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1.2 V | |
| Height | 1.5 mm | |
| Length | 5 mm | |
| Maximum Drain Source Resistance (Rds) | 62 mΩ | |
| Maximum Gate Source Voltage (Vgs) | -20 V, +20 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 2 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 3.8 nC | |
| Width | 4 mm | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Transistor Configuration Isolated | ||
Series PowerTrench | ||
Number of Elements per Chip 2 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 5.5 A | ||
Maximum Drain Source Voltage (Vds) 30 V | ||
Channel Mode Enhancement | ||
Pin Count 8 | ||
Package Type SOIC | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1.2 V | ||
Height 1.5 mm | ||
Length 5 mm | ||
Maximum Drain Source Resistance (Rds) 62 mΩ | ||
Maximum Gate Source Voltage (Vgs) -20 V, +20 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 2 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 3.8 nC | ||
Width 4 mm | ||
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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