onsemi PowerTrench, SyncFET Dual N-Channel MOSFET, 6.9 A, 8.2 A, 30 V, 8-Pin SOIC FDS6900AS
- RS-stocknr.:
- 166-2446
- Fabrikantnummer:
- FDS6900AS
- Fabrikant:
- onsemi
Subtotaal (1 rol van 2500 eenheden)*
€ 735,00
(excl. BTW)
€ 890,00
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 0,294 | € 735,00 |
*prijsindicatie
- RS-stocknr.:
- 166-2446
- Fabrikantnummer:
- FDS6900AS
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6.9 A, 8.2 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOIC | |
| Series | PowerTrench, SyncFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 22 mΩ, 27 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Series | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 10 nC @ 10 V, 11 nC @ 10 V | |
| Length | 5mm | |
| Width | 3.99mm | |
| Number of Elements per Chip | 2 | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 6.9 A, 8.2 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Series PowerTrench, SyncFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 22 mΩ, 27 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Series | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 10 nC @ 10 V, 11 nC @ 10 V | ||
Length 5mm | ||
Width 3.99mm | ||
Number of Elements per Chip 2 | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
- Land van herkomst:
- MY
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