onsemi PowerTrench, SyncFET Dual N-Channel MOSFET, 6.9 A, 8.2 A, 30 V, 8-Pin SOIC FDS6900AS

RS-stocknr.:: 671-0643
Fabrikantnummer:: FDS6900AS
Fabrikant:: onsemi

onsemi PowerTrench, SyncFET Dual N-Channel MOSFET, 6.9 A, 8.2 A, 30 V, 8-Pin SOIC FDS6900AS

Subtotaal (1 verpakking van 5 eenheden)*

€ 1,49

(excl. BTW)

€ 1,805

(incl. BTW)

Informatie over voorraden is momenteel niet toegankelijk

Aantal stuks	Per stuk	Per verpakking*
5 +	€ 0,298	€ 1,49

*prijsindicatie

RS-stocknr.:: 671-0643
Fabrikantnummer:: FDS6900AS
Fabrikant:: onsemi

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	6.9 A, 8.2 A
	Maximum Drain Source Voltage	30 V
	Series	PowerTrench, SyncFET
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	22 mΩ, 27 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2 W
	Transistor Configuration	Series
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	10 nC @ 10 V, 11 nC @ 10 V
	Transistor Material	Si
	Number of Elements per Chip	2
	Length	5mm
	Width	3.99mm
	Minimum Operating Temperature	-55 °C
	Height	1.5mm

	Alles selecteren
	Merk onsemi
	Channel Type N
	Maximum Continuous Drain Current 6.9 A, 8.2 A
	Maximum Drain Source Voltage 30 V
	Series PowerTrench, SyncFET
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 22 mΩ, 27 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2 W
	Transistor Configuration Series
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 10 nC @ 10 V, 11 nC @ 10 V
	Transistor Material Si
	Number of Elements per Chip 2
	Length 5mm
	Width 3.99mm
	Minimum Operating Temperature -55 °C
	Height 1.5mm

Land van herkomst:: MY

PowerTrench® SyncFET™ Dual MOSFET, Fairchild Semiconductor

Designed to minimise losses in power conversion, while maintaining excellent switching performance
High Performance Trench Technology for extremely low RDS(on)
SyncFET™ benefits from an efficient Schottky body diode
Applications in Synchronous Rectification DC-DC Converter, Motor Drives, networking point of load Low Side Switch

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi PowerTrench, SyncFET Dual N-Channel MOSFET, 6.9 A, 8.2 A, 30 V, 8-Pin SOIC FDS6900AS

PowerTrench® SyncFET™ Dual MOSFET, Fairchild Semiconductor

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