IXYS Single HiperFET, Q3-Class 1 Type N-Channel MOSFET, 82 A, 600 V Enhancement, 3-Pin PLUS264 IXFB82N60Q3

Bekijk alle MOSFETs

Subtotaal (1 tube van 25 eenheden)*

€ 868,10

(excl. BTW)

€ 1.050,40

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Tijdelijk niet op voorraad
  • Verzending vanaf 12 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per tube*
25 +€ 34,724€ 868,10

*prijsindicatie

RS-stocknr.:
168-4696
Fabrikantnummer:
IXFB82N60Q3
Fabrikant:
IXYS
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

82A

Maximum Drain Source Voltage Vds

600V

Series

HiperFET, Q3-Class

Package Type

PLUS264

Mount Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Height

26.59mm

Length

20.29mm

Width

5.31 mm

Number of Elements per Chip

1

Land van herkomst:
US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

Gerelateerde Links