IXYS HiperFET, Q3-Class Type N-Channel MOSFET, 37 A, 800 V Enhancement, 4-Pin SOT-227 IXFN44N80Q3
- RS-stocknr.:
- 168-4753
- Fabrikantnummer:
- IXFN44N80Q3
- Fabrikant:
- IXYS
Subtotaal (1 tube van 10 eenheden)*
€ 448,31
(excl. BTW)
€ 542,46
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 24 juni 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 10 + | € 44,831 | € 448,31 |
*prijsindicatie
- RS-stocknr.:
- 168-4753
- Fabrikantnummer:
- IXFN44N80Q3
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | HiperFET, Q3-Class | |
| Package Type | SOT-227 | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 185nC | |
| Maximum Power Dissipation Pd | 780W | |
| Forward Voltage Vf | 1.4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Length | 38.23mm | |
| Width | 25.07mm | |
| Height | 9.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series HiperFET, Q3-Class | ||
Package Type SOT-227 | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 185nC | ||
Maximum Power Dissipation Pd 780W | ||
Forward Voltage Vf 1.4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Length 38.23mm | ||
Width 25.07mm | ||
Height 9.6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- US
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Gerelateerde Links
- IXYS HiperFET 37 A 4-Pin SOT-227
- IXYS HiperFET 82 A 4-Pin SOT-227
- IXYS HiperFET 63 A 4-Pin SOT-227
- IXYS HiperFET 28 A 4-Pin SOT-227
- IXYS HiperFET 28 A 4-Pin SOT-227 IXFN32N100Q3
- IXYS HiperFET 82 A 4-Pin SOT-227 IXFN100N50Q3
- IXYS HiperFET 63 A 4-Pin SOT-227 IXFN80N50Q3
- IXYS Single HiperFET 38 A 4-Pin SOT-227 IXFN44N100Q3