IXYS Type N-Channel MOSFET, 63 A, 500 V Enhancement, 4-Pin SOT-227 IXFN80N50Q3

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Subtotaal (1 tube van 10 eenheden)*

€ 474,61

(excl. BTW)

€ 574,28

(incl. BTW)

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  • Verzending vanaf 15 september 2026
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Aantal stuks
Per stuk
Per tube*
10 +€ 47,461€ 474,61

*prijsindicatie

RS-stocknr.:
146-1760
Fabrikantnummer:
IXFN80N50Q3
Fabrikant:
IXYS
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Merk

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

63A

Maximum Drain Source Voltage Vds

500V

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

200nC

Forward Voltage Vf

1.4V

Maximum Power Dissipation Pd

780W

Maximum Operating Temperature

150°C

Height

9.6mm

Width

25.07 mm

Standards/Approvals

No

Length

38.23mm

Automotive Standard

No

Land van herkomst:
US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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