IXYS Type N-Channel MOSFET, 28 A, 1 kV Enhancement, 4-Pin SOT-227
- RS-stocknr.:
- 804-7574
- Artikelnummer Distrelec:
- 302-53-369
- Fabrikantnummer:
- IXFN32N100Q3
- Fabrikant:
- IXYS
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 63,09
(excl. BTW)
€ 76,34
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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- Plus verzending 9 stuk(s) vanaf 29 december 2025
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Aantal stuks | Per stuk |
|---|---|
| 1 - 1 | € 63,09 |
| 2 - 4 | € 61,82 |
| 5 + | € 59,94 |
*prijsindicatie
- RS-stocknr.:
- 804-7574
- Artikelnummer Distrelec:
- 302-53-369
- Fabrikantnummer:
- IXFN32N100Q3
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Package Type | SOT-227 | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 320mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 195nC | |
| Forward Voltage Vf | 1.4V | |
| Maximum Power Dissipation Pd | 780W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 38.23mm | |
| Width | 25.07 mm | |
| Height | 9.6mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 30253369 | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Package Type SOT-227 | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 320mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 195nC | ||
Forward Voltage Vf 1.4V | ||
Maximum Power Dissipation Pd 780W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 38.23mm | ||
Width 25.07 mm | ||
Height 9.6mm | ||
Automotive Standard No | ||
Distrelec Product Id 30253369 | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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