Toshiba TK N-Channel MOSFET, 60 A, 120 V, 3-Pin TO-220 TK32E12N1,S1X(S
- RS-stocknr.:
- 896-2347P
- Fabrikantnummer:
- TK32E12N1,S1X(S
- Fabrikant:
- Toshiba
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RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 896-2347P
- Fabrikantnummer:
- TK32E12N1,S1X(S
- Fabrikant:
- Toshiba
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 60 A | |
| Maximum Drain Source Voltage | 120 V | |
| Package Type | TO-220 | |
| Series | TK | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 13.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 98 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 10.16mm | |
| Typical Gate Charge @ Vgs | 34 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4.45mm | |
| Height | 15.1mm | |
| Alles selecteren | ||
|---|---|---|
Merk Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 60 A | ||
Maximum Drain Source Voltage 120 V | ||
Package Type TO-220 | ||
Series TK | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 13.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 98 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 10.16mm | ||
Typical Gate Charge @ Vgs 34 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 4.45mm | ||
Height 15.1mm | ||
- Land van herkomst:
- CN
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
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