Infineon CoolMOS™ C3 N-Channel MOSFET, 7.3 A, 650 V, 3-Pin IPAK SPU07N60C3BKMA1
- RS-stocknr.:
- 168-8581
- Fabrikantnummer:
- SPU07N60C3BKMA1
- Fabrikant:
- Infineon
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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 168-8581
- Fabrikantnummer:
- SPU07N60C3BKMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 7.3 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | IPAK (TO-251) | |
| Series | CoolMOS™ C3 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 600 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.9V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 83 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 21 nC @ 10 V | |
| Width | 2.41mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Length | 6.73mm | |
| Maximum Operating Temperature | +150 °C | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 6.22mm | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 7.3 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type IPAK (TO-251) | ||
Series CoolMOS™ C3 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 600 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.9V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 83 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 21 nC @ 10 V | ||
Width 2.41mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 6.73mm | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 6.22mm | ||
N.v.t.
- Land van herkomst:
- CN
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