Infineon BSZ097N10NS5 Type N-Channel MOSFET, 40 A, 100 V Enhancement, 8-Pin TSDSON BSZ097N10NS5ATMA1
- RS-stocknr.:
- 170-2342
- Fabrikantnummer:
- BSZ097N10NS5ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 9,47
(excl. BTW)
€ 11,46
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 4.790 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 0,947 | € 9,47 |
| 50 - 90 | € 0,766 | € 7,66 |
| 100 - 240 | € 0,719 | € 7,19 |
| 250 - 490 | € 0,662 | € 6,62 |
| 500 + | € 0,616 | € 6,16 |
*prijsindicatie
- RS-stocknr.:
- 170-2342
- Fabrikantnummer:
- BSZ097N10NS5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TSDSON | |
| Series | BSZ097N10NS5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 3.4 mm | |
| Length | 3.4mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TSDSON | ||
Series BSZ097N10NS5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 3.4 mm | ||
Length 3.4mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
OptiMOS™ 5 100V, Infineon’s latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS™ 5 100V MOSFETs offer the industry’s lowest R DS(on)
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%
R DS(on) reduction of up to 44%
Benefits:
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Target Applications:
Telecom
Server
Solar
Low voltage drives
Light electric vehicles
Adapter
Gerelateerde Links
- Infineon OptiMOS™ 5 N-Channel MOSFET 100 V, 8-Pin TSDSON BSZ097N10NS5ATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 40 V, 8-Pin TSDSON BSZ097N04LSGATMA1
- Infineon OptiMOS™ N-Channel MOSFET 30 V, 8-Pin TSDSON BSZ0904NSIATMA1
- Infineon OptiMOS™ N-Channel MOSFET 25 V, 8-Pin TSDSON BSZ060NE2LSATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 30 V, 8-Pin TSDSON BSZ050N03LSGATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 30 V, 8-Pin TSDSON BSZ050N03MSGATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 30 V, 8-Pin TSDSON BSZ035N03MSGATMA1
- Infineon OptiMOS™ N-Channel MOSFET 40 V, 8-Pin TSDSON-8 FL BSZ025N04LSATMA1