Infineon OptiMOS™ 3 N-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON BSZ050N03MSGATMA1
- RS-stocknr.:
- 827-5246
- Fabrikantnummer:
- BSZ050N03MSGATMA1
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 25 eenheden)*
€ 9,30
(excl. BTW)
€ 11,25
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 + | € 0,372 | € 9,30 |
*prijsindicatie
- RS-stocknr.:
- 827-5246
- Fabrikantnummer:
- BSZ050N03MSGATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 40 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | OptiMOS™ 3 | |
| Package Type | TSDSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 5.7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 48 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 3.4mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 34 nC @ 10 V | |
| Length | 3.4mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.1mm | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 30 V | ||
Series OptiMOS™ 3 | ||
Package Type TSDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 5.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 48 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 3.4mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 34 nC @ 10 V | ||
Length 3.4mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
N.v.t.
Gerelateerde Links
- Infineon OptiMOS™ 3 N-Channel MOSFET 30 V, 8-Pin TSDSON BSZ035N03MSGATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 200 V, 8-Pin TSDSON BSZ12DN20NS3GATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 30 V N, 8-Pin TSDSON
- Infineon OptiMOS™ N-Channel MOSFET 30 V, 3-Pin DPAK IPD30N03S2L10ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V N, 8-Pin TSDSON
- Infineon OptiMOS 5 Type N-Channel MOSFET 30 V N, 8-Pin TSDSON BSZ0589NSATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V N, 8-Pin TSDSON BSZ099N06LS5ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TSDSON
