N-Channel MOSFET, 200 mA, 20 V, 3-Pin SC-75 Vishay SI1032X-T1-GE3

RS-stocknr.:: 170-8322
Fabrikantnummer:: SI1032X-T1-GE3
Fabrikant:: Vishay

N-Channel MOSFET, 200 mA, 20 V, 3-Pin SC-75 Vishay SI1032X-T1-GE3

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RS-stocknr.:: 170-8322
Fabrikantnummer:: SI1032X-T1-GE3
Fabrikant:: Vishay

Si1032R/X, N-Channel 1.5V (G-S) MOSFET
ESD Control Selection Guide V1

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	200 mA
Maximum Drain Source Voltage	20 V
Package Type	SC-75
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	5 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	300 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-6 V, +6 V
Number of Elements per Chip	1
Width	0.95mm
Typical Gate Charge @ Vgs	750 nC @ 4.5 V
Length	1.7mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	0.8mm

N-Channel MOSFET, 200 mA, 20 V, 3-Pin SC-75 Vishay SI1032X-T1-GE3

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

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