Toshiba N-Channel MOSFET, 63 A, 30 V, 8-Pin TSON TPN4R303NL

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RS-stocknr.:
171-2365P
Fabrikantnummer:
TPN4R303NL
Fabrikant:
Toshiba
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Merk

Toshiba

Channel Type

N

Maximum Continuous Drain Current

63 A

Maximum Drain Source Voltage

30 V

Package Type

TSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

34 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

3.1mm

Maximum Operating Temperature

+150 °C

Width

3.1mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

14.8 nC @ 10 V

Forward Diode Voltage

1.2V

Height

0.85mm

N.v.t.

High-Efficiency DC-DC Converters
Switching Voltage Regulators
High-speed switching
Small gate charge: QSW = 3.9 nC (typ.)
Low drain-source on-resistance: RDS(ON= 5.1 mΩ (typ.(VGS = 4.5 V)
Low leakage current: IDSS = 10 μA (max(VDS = 30 V)
Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)

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