Taiwan Semi N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-23 TSM2308CX RFG
- RS-stocknr.:
- 171-3697P
- Fabrikantnummer:
- TSM2308CX RFG
- Fabrikant:
- Taiwan Semiconductor
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- RS-stocknr.:
- 171-3697P
- Fabrikantnummer:
- TSM2308CX RFG
- Fabrikant:
- Taiwan Semiconductor
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Taiwan Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 192 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 1.25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 3.99 nC @ 4.5 V | |
| Width | 1.4mm | |
| Length | 3mm | |
| Number of Elements per Chip | 1 | |
| Height | 1.05mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Alles selecteren | ||
|---|---|---|
Merk Taiwan Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 3 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 192 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 1.25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 3.99 nC @ 4.5 V | ||
Width 1.4mm | ||
Length 3mm | ||
Number of Elements per Chip 1 | ||
Height 1.05mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
The Taiwan Semiconductor 60V, 3A, 3 pin, N-channel MOSFET has single transistor configuration and enhancement channel mode. It is generally used DC-DC power system
and load switch applications.
and load switch applications.
Advance trench process technology
High density cell design for ultra low on-resistance
Operating temperature ranges between -55 °C to +150 °C
1.25W max. power dissipation
Gate threshold voltage ranges between 1.2V-2.5V
High density cell design for ultra low on-resistance
Operating temperature ranges between -55 °C to +150 °C
1.25W max. power dissipation
Gate threshold voltage ranges between 1.2V-2.5V