Taiwan Semiconductor Type P-Channel MOSFET, 3 A, 30 V Enhancement, 3-Pin SOT-23 TSM2307CX RFG
- RS-stocknr.:
- 743-6030
- Artikelnummer Distrelec:
- 304-45-913
- Fabrikantnummer:
- TSM2307CX RFG
- Fabrikant:
- Taiwan Semiconductor
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 8,375
(excl. BTW)
€ 10,125
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tekort aan aanbod
- Plus verzending 50 stuk(s) vanaf 26 januari 2026
- Plus verzending 22.275 stuk(s) vanaf 02 februari 2026
Onze huidige voorraad is beperkt en onze leveranciers verwachten tekorten.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 225 | € 0,335 | € 8,38 |
| 250 - 475 | € 0,282 | € 7,05 |
| 500 + | € 0,273 | € 6,83 |
*prijsindicatie
- RS-stocknr.:
- 743-6030
- Artikelnummer Distrelec:
- 304-45-913
- Fabrikantnummer:
- TSM2307CX RFG
- Fabrikant:
- Taiwan Semiconductor
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Taiwan Semiconductor | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.25W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.1mm | |
| Height | 1.2mm | |
| Width | 1.7 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Taiwan Semiconductor | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.25W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3.1mm | ||
Height 1.2mm | ||
Width 1.7 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
P-Channel Power MOSFET, Taiwan Semiconductor
MOSFET Transistors, Taiwan Semiconductor
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