ROHM RD3L080SN N-Channel MOSFET, 8 A, 60 V, 2 + Tab-Pin DPAK RD3L080SNTL1

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RS-stocknr.:
172-0391
Fabrikantnummer:
RD3L080SNTL1
Fabrikant:
ROHM
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Merk

ROHM

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

60 V

Package Type

TO-252

Series

RD3L080SN

Mounting Type

Surface Mount

Pin Count

2 + Tab

Maximum Drain Source Resistance

109 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

15 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

9.4 nC @ 10 V

Length

6.8mm

Width

6.4mm

Number of Elements per Chip

1

Height

2.3mm

Forward Diode Voltage

1.5V

Minimum Operating Temperature

-55 °C

RD3L080SN is a Power MOSFET with Low on - resistance., suitable for Switching.

Low on-resistance.
Fast switching speed.
Drive circuits can be simple.
Parallel use is easy.
Pb-free plating

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