Name: ROHM RD3T100CN N-Channel MOSFET, 10 A, 200 V, 3-Pin DPAK RD3T100CNTL1
Brand: ROHM
SKU: 177-6805
Price: 1.28 EUR
Availability: Discontinued

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	ROHM
	Channel Type	N
	Maximum Continuous Drain Current	10 A
	Maximum Drain Source Voltage	200 V
	Package Type	TO-252
	Series	RD3T100CN
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	182 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	5.25V
	Minimum Gate Threshold Voltage	3.25V
	Maximum Power Dissipation	85 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±30 V
	Number of Elements per Chip	1
	Length	6.8mm
	Width	6.4mm
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	25 nC @ 10 V
	Height	2.4mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.5V

	Alles selecteren
	Merk ROHM
	Channel Type N
	Maximum Continuous Drain Current 10 A
	Maximum Drain Source Voltage 200 V
	Package Type TO-252
	Series RD3T100CN
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 182 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 5.25V
	Minimum Gate Threshold Voltage 3.25V
	Maximum Power Dissipation 85 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ±30 V
	Number of Elements per Chip 1
	Length 6.8mm
	Width 6.4mm
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 25 nC @ 10 V
	Height 2.4mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.5V

Datasheet

N.v.t.

Land van herkomst:: TH

RD3T100CN is a power MOSFET with low on-resistance and fast switching, suitable for the switching application

Low on-resistance
Fast switching speed
Drive circuits can be simple
Parallel use is easy
Pb-free plating

ROHM RD3T100CN N-Channel MOSFET, 10 A, 200 V, 3-Pin DPAK RD3T100CNTL1

Gerelateerde Links