Name: ROHM RF4E100AJ N-Channel MOSFET, 10 A, 30 V, 8-Pin HUML2020L RF4E100AJTCR
Brand: ROHM
SKU: 172-0507
Price: 0.45 EUR
Availability: Discontinued

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	ROHM
	Channel Type	N
	Maximum Continuous Drain Current	10 A
	Maximum Drain Source Voltage	30 V
	Package Type	HUML2020L
	Series	RF4E100AJ
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	17.9 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1.5V
	Minimum Gate Threshold Voltage	0.5V
	Maximum Power Dissipation	2 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±12 V
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	13 nC @ 4.5 V
	Length	2.1mm
	Width	2.1mm
	Maximum Operating Temperature	+150 °C
	Height	0.6mm
	Forward Diode Voltage	1.2V
	Minimum Operating Temperature	-55 °C

	Alles selecteren
	Merk ROHM
	Channel Type N
	Maximum Continuous Drain Current 10 A
	Maximum Drain Source Voltage 30 V
	Package Type HUML2020L
	Series RF4E100AJ
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 17.9 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1.5V
	Minimum Gate Threshold Voltage 0.5V
	Maximum Power Dissipation 2 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ±12 V
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 13 nC @ 4.5 V
	Length 2.1mm
	Width 2.1mm
	Maximum Operating Temperature +150 °C
	Height 0.6mm
	Forward Diode Voltage 1.2V
	Minimum Operating Temperature -55 °C

RF4E100AJ is high power small mold package(HUML2020L8) MOSFET for switching and DC/DC converter, battery switch application.

Low on - resistance.
High Power Small Mold Package (HUML2020L8).
Pb-free lead plating
Halogen Free

ROHM RF4E100AJ N-Channel MOSFET, 10 A, 30 V, 8-Pin HUML2020L RF4E100AJTCR

Gerelateerde Links