ROHM RQ3E180AJ N-Channel MOSFET, 30 A, 30 V, 8-Pin HSMT RQ3E180AJTB

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RS-stocknr.:
171-9853
Fabrikantnummer:
RQ3E180AJTB
Fabrikant:
ROHM
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Merk

ROHM

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

30 V

Series

RQ3E180AJ

Package Type

HSMT

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

39 nC @ 4.5 V

Width

3.1mm

Length

3.3mm

Number of Elements per Chip

1

Height

0.85mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Land van herkomst:
JP
RQ3E180AJ is MOSFET for switching application that features Low on-resistance.

Low on - resistance.
Small Surface Mount Package.
Pb-free lead plating.

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