onsemi FCH023N65S3 Type N-Channel MOSFET, 75 A, 650 V Enhancement, 3-Pin TO-247 FCH023N65S3-F155

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Verpakkingsopties
RS-stocknr.:
172-4612
Fabrikantnummer:
FCH023N65S3-F155
Fabrikant:
onsemi
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Merk

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

75A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

FCH023N65S3

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

23mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

222nC

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

595W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

20.82mm

Width

4.82 mm

Length

15.87mm

Automotive Standard

No

Land van herkomst:
CN
SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

700 V @ TJ = 150 oC

Higher system reliability at low temperature operation

Ultra Low Gate Charge (Typ. Qg = 78 nC)

Lower switching loss

Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)

Lower switching loss

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

Typ. RDS(on) = 62 mΩ

Wave soldering guarantee

Computing

Telecomunication

Industrial

Telecom / Server

Solar inverter / UPS

EVC

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