onsemi FCH Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-247 FCH125N65S3R0-F155
- RS-stocknr.:
- 178-4649
- Fabrikantnummer:
- FCH125N65S3R0-F155
- Fabrikant:
- onsemi
Subtotaal (1 verpakking van 2 eenheden)*
€ 9,35
(excl. BTW)
€ 11,314
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 05 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 + | € 4,675 | € 9,35 |
*prijsindicatie
- RS-stocknr.:
- 178-4649
- Fabrikantnummer:
- FCH125N65S3R0-F155
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | FCH | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 181W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.87mm | |
| Height | 20.82mm | |
| Standards/Approvals | No | |
| Width | 4.82 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series FCH | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 181W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 15.87mm | ||
Height 20.82mm | ||
Standards/Approvals No | ||
Width 4.82 mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
700 V @ TJ = 150 oC
Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF)
Ultra Low Gate Charge (Typ. Qg = 46 nC)
Optimized Capacitance
Typ. RDS(on) = 105 mΩ
Internal Gate Resistance: 0.5 Ω
Benefits:
Higher system reliability at low temperature operation
Low switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Consumer
Industrial
End Products:
Notebook / Desktop computer / Game console
Telecom / Server
UPS / Solar
LED Lighting / Ballast
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